Metal Loss Prevention Using Implantation

ABSTRACT

The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.15/993,768, entitled “Metal Loss Prevention Using Implantation,” filedon May 31, 2018, which application is hereby incorporated herein byreference.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (e.g., the number of interconnecteddevices per chip area) has generally increased while geometry size(e.g., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs.

Accompanying the scaling down of devices, manufacturers have begun usingnew and different materials and/or combination of materials tofacilitate the scaling down of devices. Scaling down, alone and incombination with new and different materials, has also led to challengesthat may not have been presented by previous generations at largergeometries.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a three-dimensional view of an intermediate structure at astage during an example method for forming a conductive feature inaccordance with some embodiments.

FIGS. 2 through 9 are cross-sectional views of respective intermediatestructures at respective stages during the example method for forming aconductive feature in accordance with some embodiments.

FIG. 10 is a partial enlarged view of FIG. 6.

FIG. 11 is a partial enlarged view of FIG. 7.

FIG. 12 is a partial enlarged view of FIG. 9.

FIGS. 13 through 16 are cross-sectional views of respective intermediatestructures at respective stages during another example method forforming a conductive feature in accordance with some embodiments.

FIG. 17 is a partial enlarged view of FIG. 13.

FIG. 18 is a partial enlarged view of FIG. 16.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Generally, the present disclosure provides methods for formingconductive features in a semiconductor device and the conductivefeatures formed thereby. Particularly, some embodiments provide a methodfor forming a conductive plug in an interlayer dielectric to connectwith a conductive structure under the interlayer dielectric. The methodincludes filling an opening through an interlayer dielectric with aconductive fill material without using an adhesion layer or a barrierlayer, and with implanting the interlayer dielectric to eliminate gapsand cracks between the conductive fill material and the interlayerdielectric. The implantation can create compression stress between theconductive fill material and the interlayer dielectric to close gaps andcracks between the materials, thus, preventing loss of the conductivestructure under the conductive fill material during a subsequentplanarization process, such as a chemical mechanical polishing (CMP)process. Embodiments can be used in any suitable situations to removegaps between two materials.

Example embodiments described herein are described in the context offorming conductive features in Back End of the Line (BEOL) and/or MiddleEnd of the Line (MEOL) processing. Embodiments described herein are inthe context of forming a conductive feature to a Fin Field EffectTransistor (FinFET) (e.g., to a gate structure of a FinFET). Otherembodiments may be implemented in other contexts, such as with differentdevices, such as planar Field Effect Transistors (FETs), Vertical GateAll Around (VGAA) FETs, Horizontal Gate All Around (HGAA) FETs, bipolarjunction transistors (BJTs), diodes, capacitors, inductors, resistors,etc. In some embodiments, the conductive feature can be in anintermetallization dielectric in BEOL processing. Implementations ofsome aspects of the present disclosure may be used in other processesand/or in other devices.

Some variations of the example methods and structures are described. Aperson having ordinary skill in the art will readily understand othermodifications that may be made that are contemplated within the scope ofother embodiments. Although method embodiments may be described in aparticular order, various other method embodiments may be performed inany logical order and may include fewer or more steps than what isdescribed herein. In some figures, some reference numbers of componentsor features illustrated therein may be omitted to avoid obscuring othercomponents or features; this is for ease of depicting the figures.

FIG. 1 is a three-dimensional view of an intermediate structure at astage during an example method for forming a conductive feature inaccordance with some embodiments. FIGS. 2 through 9 illustratecross-sectional views of respective intermediate structures atrespective stages during the example method for forming a conductivefeature in accordance with some embodiments.

The intermediate structure of FIG. 1, as described in the following, isused in the implementation of FinFETs. Other structures may beimplemented in other example embodiments. The intermediate structureincludes first and second fins 46 formed on a semiconductor substrate42, with respective isolation regions 44 on the semiconductor substrate42 between neighboring fins 46. The semiconductor substrate 42 may be orinclude a bulk semiconductor substrate, a semiconductor-on-insulator(SOI) substrate, or the like, which may be doped (e.g., with a p-type oran n-type dopant) or undoped. In some embodiments, the semiconductormaterial of the semiconductor substrate 42 may include an elementalsemiconductor such as silicon (Si) or germanium (Ge); a compoundsemiconductor; an alloy semiconductor; or a combination thereof.

The fins 46 are formed on the semiconductor substrate 42, such as byetching trenches in the semiconductor substrate 42 to form the fins 46.The fins 46 may be patterned in the semiconductor substrate 42 by anysuitable method. For example, the fins 46 may be patterned using one ormore photolithography processes, including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in some embodiments, asacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers may then be used to pattern thefins 46.

Isolation regions 44 are formed with each being in a correspondingtrench. The isolation regions 44 may include or be an insulatingmaterial such as an oxide (such as silicon oxide), a nitride, the like,or a combination thereof, and the insulating material may be depositedusing an appropriate deposition process. The insulating material may berecessed after being deposited to form the isolation regions 44. Theinsulating material is recessed such that the fins 46 protrude frombetween neighboring isolation regions 44, which may, at least in part,thereby delineate the fins 46 as active areas on the semiconductorsubstrate 42. Further, top surfaces of the isolation regions 44 may havea flat surface as illustrated, a convex surface, a concave surface (suchas dishing), or a combination thereof, which may result from an etchprocess. A person having ordinary skill in the art will readilyunderstand that the processes described above are just examples of howfins 46 may be formed. In other examples, the fins 46 may be formed byother processes and may include heteroepitaxial and/or homoepitaxialstructures.

In the embodiment shown in FIG. 1, a dummy gate stack is formed alongrespective sidewalls of and over the fins 46. The dummy gate stack isfor a replacement gate process, as described herein. The dummy gatestack extends longitudinally perpendicularly to respective longitudinaldirections of the fins 46. The dummy gate stack includes an interfacialdielectric 48 along and on the fins 46, a dummy gate 50 over theinterfacial dielectric 48, and a mask 52 over the dummy gate 50.

The interfacial dielectric 48 may include or be silicon oxide, siliconnitride, the like, or multilayers thereof. The dummy gate 50 may includeor be silicon (e.g., polysilicon) or another material. The mask 52 mayinclude or be silicon nitride, silicon oxynitride, silicon carbonnitride, the like, or a combination thereof. Layers for the interfacialdielectric 48, dummy gate 50, and mask 52 for the dummy gate stack maybe sequentially deposited or formed, such as by any acceptabledeposition technique, and then patterned, for example, usingphotolithography and one or more etch processes, into the dummy gatestack.

FIG. 1 further illustrates a reference cross-section that is used inlater figures. Cross-section A-A is in a plane along, e.g., channels inthe fin 46 between opposing source/drain regions. FIGS. 2 through 9illustrate cross-sectional views at various stages of processing in theexample method corresponding to cross-section A-A. FIG. 2 illustrates across-sectional view of the intermediate structure of FIG. 1 at thecross-section A-A.

FIG. 3 illustrates the formation of gate spacers 54, epitaxysource/drain regions 56, a contact etch stop layer (CESL) 60, and afirst interlayer dielectric (ILD) 62. The gate spacers 54 are formedalong sidewalls of the dummy gate stack (e.g., sidewalls of theinterfacial dielectrics 48, dummy gates 50, and masks 52) and over thefins 46. The gate spacers 54 may be formed by conformally depositing oneor more layers for the gate spacers 54 and anisotropically etching theone or more layers, for example. The one or more layers for the gatespacers 54 may include or be silicon nitride, silicon oxynitride,silicon carbon nitride, the like, multi-layers thereof, or a combinationthereof.

After formation of the gate spacers 54, recesses are formed in the fins46 on opposing sides of the dummy gate stack (e.g., using the dummy gatestack and gate spacers 54 as a mask) by an etch process. The epitaxysource/drain regions 56 are formed in the recesses by an appropriateepitaxial growth or deposition process. The epitaxy source/drain regions56 may include or be silicon germanium, silicon carbide, siliconphosphorus, silicon carbon phosphorus, pure or substantially puregermanium, a III-V compound semiconductor, a II-VI compoundsemiconductor, or the like. In some embodiments, the recessing andepitaxial growth may be omitted, and the source/drain regions may beformed by implanting dopants into the fins 46 using the dummy gate stackand gate spacers 54 as masks.

After formation of the source/drain regions 56, the CESL 60 isconformally deposited, by an appropriate deposition process, on surfacesof the epitaxy source/drain regions 56, sidewalls and top surfaces ofthe gate spacers 54, top surfaces of the masks 52, and top surfaces ofthe isolation regions 44. Generally, an etch stop layer (ESL) canprovide a mechanism to stop an etch process when forming, e.g., contactsor vias. An ESL may be formed of a dielectric material having adifferent etch selectivity from adjacent layers or components. The CESL60 may comprise or be silicon nitride, silicon carbon nitride, siliconcarbon oxide, carbon nitride, the like, or a combination thereof.

The first ILD 62 is then deposited, by an appropriate depositionprocess, on the CESL 60. The first ILD 62 may comprise or be silicondioxide, a low-k dielectric material (e.g., a material having adielectric constant lower than silicon dioxide), silicon oxynitride,phosphosilicate glass (PSG), borosilicate glass (BSG),borophosphosilicate glass (BPSG), undoped silicate glass (USG),fluorinated silicate glass (FSG), organosilicate glasses (OSG),SiO_(x)C_(y), silicon carbon material, a compound thereof, a compositethereof, the like, or a combination thereof.

In FIG. 4, a planarization process, such as a CMP, may be performed tolevel the top surfaces of the first ILD 62 and CESL 60 with the topsurface of the dummy gate 50. The dummy gate 50 is removed by one ormore etch processes. A replacement gate structure is formed in therecess where the dummy gate stack was removed. The replacement gatestructure includes, as illustrated, an interfacial dielectric 70, a gatedielectric layer 72, one or more optional conformal layers 74, and agate conductive fill material 76. The interfacial dielectric 70 isformed on sidewalls and top surfaces of the fins 46 along the channelregions. The interfacial dielectric 70 can be, for example, theinterfacial dielectric 48 if not removed, an oxide (e.g., silicon oxide)formed by thermal or chemical oxidation of the fin 46, and/or an oxide(e.g., silicon oxide), nitride (e.g., silicon nitride), and/or anotherdielectric layer.

The gate dielectric layer 72 can be conformally deposited in therecesses where dummy gate stack was removed (e.g., on top surfaces ofthe isolation regions 44, on the interfacial dielectric 70, andsidewalls of the gate spacers 54) and on the top surfaces of the firstILD 62, the CESL 60, and gate spacers 54. The gate dielectric layer 72can be or include silicon oxide, silicon nitride, a high-k dielectricmaterial, multilayers thereof, or other dielectric material. A high-kdielectric material may include a metal oxide of or a metal silicate ofhafnium (Hf), aluminum (Al), zirconium (Zr), lanthanum (La), magnesium(Mg), barium (Ba), titanium (Ti), lead (Pb), multilayers thereof, or acombination thereof.

Then, the one or more optional conformal layers 74 can be conformally(and sequentially, if more than one) deposited on the gate dielectriclayer 72. The one or more optional conformal layers 74 can include oneor more barrier and/or capping layers and one or more work-functiontuning layers. The one or more barrier and/or capping layers can includea nitride, silicon nitride, carbon nitride, and/or aluminum nitride oftantalum and/or titanium; a nitride, carbon nitride, and/or carbide oftungsten; the like; or a combination thereof. The one or morework-function tuning layer may include or be a nitride, silicon nitride,carbon nitride, aluminum nitride, aluminum oxide, and/or aluminumcarbide of titanium and/or tantalum; a nitride, carbon nitride, and/orcarbide of tungsten; cobalt; platinum; the like; or a combinationthereof.

The gate conductive fill material 76 is formed over the one or moreoptional conformal layers 74 (e.g., over the one or more work-functiontuning layers), if implemented, and/or the gate dielectric layer 72. Thegate conductive fill material 76 can fill the remaining recess where thedummy gate stack was removed. The gate conductive fill material 76 maybe or comprise a metal-containing material such as tungsten, cobalt,aluminum, ruthenium, copper, multi-layers thereof, a combinationthereof, or the like. Portions of the gate conductive fill material 76,one or more optional conformal layers 74, and gate dielectric layer 72above the top surfaces of the first ILD 62, the CESL 60, and gatespacers 54 are removed, such as by a CMP. The replacement gate structurecomprising the gate conductive fill material 76, one or more optionalconformal layers 74, gate dielectric layer 72, and interfacialdielectric 70 may therefore be formed as illustrated in FIG. 4.

In FIG. 5, an ESL (etch stop layer)78 is deposited over the first ILD62, CESL 60, gate spacers 54, and replacement gate structure. The ESL 78may comprise or be silicon nitride, silicon carbon nitride, carbonnitride, the like, or a combination thereof. In some embodiments, theESL 78 has a thickness in a range from about 20 Å to about 500 Å, forexample about 200 Å.

A second ILD 80 is deposited over the ESL 78. The second ILD 80 maycomprise or be silicon dioxide, a low-k dielectric material, siliconoxynitride, PSG, BSG, BPSG, USG, FSG, OSG, SiO_(x)C_(y), silicon carbonmaterial, a compound thereof, a composite thereof, the like, or acombination thereof. In some embodiments, the second ILD 80 has athickness in a range from about 20 Å to about 500 Å, for example about350 Å. In some embodiments, the ESL 78 may not be implemented, and thesecond ILD 80 may be directly deposited on the first ILD 62, CESL 60,gate spacers 54, and replacement gate structure.

An opening 82 is then formed through the second ILD 80 and the ESL 78 toexpose at least a portion of the replacement gate structure. The secondILD 80 and the ESL 78 may be patterned with the opening 82, for example,using photolithography and one or more etch processes.

In FIG. 6, a conductive feature 84 is formed in the opening 82. Theconductive feature 84 is formed directly in the opening 82 to connectwith the replacement gate structure without using any adhesion layerand/or barrier layer in between. The conductive feature 84 is grown on atop surface of the gate conductive fill material 76, gradually fillingthe opening 82 from the bottom in a bottom-up manner. After filling theopening 82, the conductive feature 84 “spills” out the opening 82forming an overfill portion 84 o. The overfill portion 84 o is above thetop surface of the second ILD 80. The overfill portion 84 o generallyhas a larger diameter than the opening 82. The bottom-up formationenables direct connection between the conductive feature 84 and the gateconductive fill material 76, which may reduce connection resistance. Thebottom-up manner filling may also reduce undesired defects, such asvoids or seams. For example, voids or seams may be avoided because thelikelihood of early closure of the opening 82 can be reduced because ofthe bottom-up formation.

In some embodiments, the conductive feature 84 can be deposited in theopening 82 by chemical vapor deposition (CVD), selective atomic layerdeposition (ALD), electroless deposition (ELD), electroplating, physicalvapor deposition (PVD), or another deposition technique. In someembodiments, the bottom-up formation of the conductive feature 84 isachieved by PVD sputtering. In other embodiments, the bottom-upformation of the conductive feature 84 is achieved by using aself-alignment monolayer (SAM) inhibitor on dielectric surfaces whileperforming CVD growth over conductive surfaces. In some embodiments, theconductive feature 84 may be or comprise tungsten (W), cobalt (Co),copper (Cu), ruthenium (Ru), aluminum (Al), gold (Au), silver (Ag),alloys thereof, the like, or a combination thereof.

FIG. 10 is a partial enlarged view of FIG. 6 showing details around theconductive feature 84. Because of the absence of any adhesion layer orbarrier layer between the conductive feature 84 and the second ILD 80,gaps 86 can exist between the conductive feature 84 and the second ILD80. The gaps 86 may cause unwanted behaviors in subsequent processes.For example, process chemistries from subsequent processes can penetratethrough the gaps 86 and interact with the underlying materials. Theconductive material, such as copper or cobalt, in the underlyingmaterial may be corroded by chemical attack in an acidic environment anddegrade the electrical properties of the device. For example, in asubsequent CMP process, the gaps 86 can permit polishing slurry topenetrate to the underlying layers, such as the gate conductive fillmaterial 76. The polishing slurry can react with the gate conductivefill material 76 causing loss of the gate conductive fill material 76.Similarly, the gaps 86 can also expose the underlying layers to etchchemistries, plasma processing environment in the subsequent processes.In some embodiments, the gaps 86 are reduced or closed by one or moreimplantation processes.

Generally, in some embodiments, a conductive feature is first formed inan interlayer dielectric layer without using any adhesion layer orbarrier layer, and an implantation process is then performed to apply acompression between the conductive feature and interlayer dielectriclayer to close any gaps due to the absence of the adhesion layer orbarrier layer.

FIG. 7 schematically demonstrates an implantation process to eliminateor reduce the gaps 86 between the conductive feature 84 and thesurrounding dielectric material, such as the second ILD 80 and the ESL78. In some embodiments, after formation of the conductive feature 84,ion beams 88 of one or more species of neutral elements are projectedtowards the dielectric material, such as the second ILD 80 and the ESL78, by an implantation process. In some embodiments, the neutralelements are implanted to the second ILD 80 and the ESL 78 to modifyphysical properties, such as volume and stress, but withoutsignificantly altering The one or more species of neutral elements areimplanted at a desired depth and at desired concentration to close thepath from the top surface to layers under the conductive features 84. Insome embodiments, the one or more specimens of neutral elements includegermanium (Ge), silicon (Si), nitrogen (N), or other elements with alarger atomic volume than the material being implanted.

In some embodiments, the implantation process is performed at an energylevel in a range from about 10k eV to about 80k eV depending on thedesign, such as the original thickness and final thickness of the secondILD 80. With other parameters unchanged, a higher energy level leads toa deeper implantation peak. In some embodiments, the implantationprocess is performed at a dosage level in a range from about 5×10¹³counts/cm² to about 5×10¹⁶ counts/cm², which may depend on the dimensionof gaps to be closed. A higher dosage can correspond to a largerexpansion in the dielectric layers to close a larger gap. In someembodiments, the implantation process is performed at a temperature in arange from about −100° C. to about 450° C. Optionally, an anneal processis performed after the implantation process to adjust a crystallinestructure and reduce damage caused by the implantation process in theimplanted layers.

FIG. 11 is a partial enlarged view of FIG. 7 showing the details aroundthe conductive feature 84 after the implantation process. The speciesimplanted in the implanted second ILD 80 i and the implanted ESL 78 icause the implanted second ILD 80 i and the implanted ESL 78 i toexpand. The expansion can occur in all directions. As shown in Figureii, the expansion induces compression at an interface 92 between (i) theconductive feature 84 and (ii) the implanted second ILD 80 i orimplanted ESL 78 i to close the gaps 86. The expansion can occur alongthe z-direction, which is along the direction of depth. In someembodiments, the expansion along the z-direction may be measured toindicate the overall amount of expansion thus determining thecompression between the conductive feature 84 and the dielectric layers.

Concentration profiles 94 a-96 e are implant species concentrationprofiles along the depth of the implanted second ILD 80 i and theimplanted ESL 78 i in a few examples of Ge implantation. Concentrationprofiles 94 a-94 d are profiles of implantation processes performedusing the same dosage and increasing power levels. Points 96 a-96 d arepeak concentration points of the corresponding concentration profiles 94a-94 d. Concentration profiles 94 a-94 d show that the peakconcentration point deepens with increasing power level when dosageremains constant.

Concentration profile 94 e is a profile of implantation processesperformed using the same power level and a lower dosage as inconcentration profile 94 d. Concentration profiles 94 e and 94 d havesubstantially the same shape.

The implant species concentration is the highest at the peakconcentration point 96 a-96 e, where the induced compression towards theconductive feature 84 is also likely to be the highest. Line 98indicates a depth level where a subsequent CMP process ends. The portionof the second ILD 80 under the line 98 remains in the device while theportion of the second ILD 80 above the line 98 is removed during theprocess. In some embodiments, the implantation process is designed sothat the peak concentration point is at a depth level above the line 98.The configuration can ensure that the portion of the second ILD 80interacting with the CMP slurry has high compression towards theconductive feature 84 to cut off the path of the slurry to theunderlying layers.

The conductive feature 84, having a denser crystalline structure thanthe second ILD 80, is more difficult for the implanted species topenetrate. As a result, the implanted species are concentrated in ashallower depth in the conductive feature 84 than in the second ILD 80.In some embodiments, the majority of the implanted species in theconductive feature 84 is above the line 98, and thus, will be removed bythe planarization process.

In some embodiments, the ion beams 88 may be directed at an angletowards the substrate to direct species towards areas covered the byoverfill portion 84 o of the conductive feature 84.

In FIG. 8, a barrier layer 100 is formed over the conductive feature 84and remaining portions of the implanted second ILD 80 i not covered bythe conductive feature 84. The barrier layer 100 may be or comprisetitanium nitride, titanium oxide, tantalum nitride, tantalum oxide, thelike, or a combination thereof, and may be deposited by ALD, CVD, oranother deposition technique. A blanket conductive layer 102 is thenformed over the barrier layer 100. The blanket conductive layer 102 mayfill up other recesses or openings in the second ILD 80. In someembodiments, the conductive layer 102 can be deposited by CVD, ALD, ELD,physical vapor deposition (PVD), electroplating, or another depositiontechnique. In some embodiments, the conductive layer 102 may be orcomprise tungsten (W), cobalt (Co), copper (Cu), ruthenium (Ru),aluminum (Al), gold (Au), silver (Ag), alloys thereof, the like, or acombination thereof. In some embodiments, the conductive layer 102 andthe conductive feature 84 may include the same material. The blanketconductive layer 102 also brings the surface of the substrate in acondition for a CMP process.

In FIG. 9, a planarization process, such as a CMP, is performed toremove excess amounts of the conductive layer 102, the barrier layer100, the implanted second ILD 80 i, and the conductive feature 84. Insome embodiments, the implanted second ILD 80 i has a thickness in arange between about 20 Å to about 500 Å, for example about 50 Å, afterthe planarization process. Because the implanted second ILD 80 i and theimplanted ESL 78 i compress against the conductive feature 84, the CMPslurry may be prevented from penetrating to the gaps around theconductive feature 84 leaving the underlying layer undamaged.

FIG. 12 is a partial enlarged view of FIG. 9 showing features adjacentthe conductive feature 84 after the planarization process. Concentrationprofiles 104 a-104 e are implant species concentration profiles in theimplanted second ILD 80 i and the implanted ESL 78 i after theplanarization process. In some embodiments, the implanted second ILD 80i and the implanted ESL 78 i have an implant species concentrationprofile that is decreasing with depth. Particularly, after theplanarization process, the implant species concentration profiledecreases from a peak concentration of the implant species in theremaining implanted second ILD 80 i and the implanted ESL 78 i, which isproximate a top surface Bot of the remaining implanted second ILD 80 i,in a direction towards underlying layers in the substrate, such as alower surface 80 l of the second ILD 80 i and a lower surface 78 l ofthe implanted ESL 78 i. The surface of the implanted second ILD 80 ibeing distal from the substrate. In some embodiments, the implantedsecond ILD 80 i has an implant species concentration, such as Geconcentration, in a range from about 8×10¹⁸ atoms/cm³ to about 1×10²¹atoms/cm³. In some embodiments, the implanted ESL 78 i has an implantspecies concentration, such as Ge concentration, in a range from about2×10¹⁸ atoms/cm³ to about 6×10²⁰ atoms/cm³. Experiments indicate thatthe presence of the implanted species in the second ILD 80 generally donot have detectable effects in the insulating functions of the secondILD 80. Any remaining implanted species in the conductive feature 84also generally does not affect the conductivity of the conductivefeature 84.

FIGS. 13 through 16 are cross-sectional views of respective intermediatestructures at respective stages during another example method forforming a conductive feature in accordance with some embodiments.Processing first proceeds as described above with respect to FIGS. 1through 6 before proceeding to processing described below with respectto FIG. 13. FIGS. 13 through 16 illustrate cross-sectional views atvarious stages of processing in the example method corresponding tocross-section A-A.

Generally, in some embodiments, a conductive feature is first formed inan interlayer dielectric layer without using any adhesion layer orbarrier layer, a first implantation process is then performed to apply acompression at a shallow depth between the conductive feature andinterlayer dielectric layer to close any gaps, a first planarizationprocess is then performed to remove overfill portions of the conductivefeatures, a second implantation process is performed to apply acompression between the remaining conductive features and interlayerdielectric layer to close any gaps, and then a second planarizationprocess is performed to remove any excess portions of the conductivefeatures and the interlayer dielectric layer.

In FIG. 13, a first implantation process is performed after theconductive feature 84 is formed as shown in FIGS. 2-6. The firstimplantation process is similar to the implantation process describedwith FIG. 7 except that the first implantation process is configured tohave a shallower concentration peak point to prevent damage to theunderlying layers while removing the overfill portion 84 o of theconductive feature 84.

In some embodiments, after formation of the conductive feature 84, ionbeams 106 of one or more species of neutral elements are projectedtowards the dielectric material, such as the second ILD 80 and the ESL78, by an implantation process. The one or more species of neutralelements are implanted at a desired depth and at desired concentrationto close the path from the top surface to layers under the conductivefeatures 84. In some embodiments, the one or more specimens of neutralelements include germanium (Ge), silicon (Si), nitrogen (N), or otherelements with a larger atomic volume than the material being implanted.The first implantation process is performed an energy level, a dosage,and an angle so that the gaps between the second ILD 80 immediatelybelow the overfill portion 84 o can be closed.

Because the overfill portion 84 o is typically larger in diameter thanthe portion in the opening 82 and the conductive feature 84 generallyhas a much denser crystalline structure than the second ILD 80, theoverfill portion 84 o may act like an umbrella preventing implantedspecies from reaching the second ILD 80 below the overfill portion 84 o.In some embodiments, the ion beams 106 may be directed towards thesubstrate at an angle to reach the second ILD 80 being shielded by theoverfill portion 84 o. In FIG. 13, the ion beam 106 is directed at anangle no relative to an axis 108, which is perpendicular to a topsurface of the substrate. During operation, the substrate 42 isrotating, e.g., around the axis 108. As the substrate 42 rotates aboutthe axis 108, the second ILD 80 under the overfill portion 84 o aroundof the conductive feature 84 can be implanted by the ion beam 106 at theangle 110. In some embodiments, the angle 110 may be in a range fromgreater than 0 degrees to about 45 degrees.

In some embodiments, the first implantation process is performed at anenergy level in a range from about 5 keV to about 40 keV. A higherenergy level can correspond to a deeper implantation peak.

In some embodiments, the first implantation process is performed at adosage level in a range from about 5×10¹³ counts/cm² to about 5×10¹⁶counts/cm², which may depend on the dimension of gaps to be closed. Ahigher dosage corresponds to a larger expansion in the dielectric layersto close a larger gap.

In some embodiments, the first implantation process is performed at atemperature in a range from about −100° C. to about 450° C. Optionally,an anneal process is performed after the first implantation process toadjust a crystalline structure and reduce damage caused by theimplantation process in the implanted layers.

FIG. 17 is a partial enlarged view of FIG. 13 showing details around theconductive feature 84 after the first implantation process.Concentration profile 112 is implant species concentration profile alongthe depth of the implanted second ILD 80 i. Point 114 is a peakconcentration point of the concentration profile 112. In someembodiments, the peak concentration point is at a distance 116 below thetop surface of the second ILD 80. In some embodiments, the distance 116is at a depth in a range from greater than about 0 Å to about 500 Å. Thehighest compression between the second ILD 80 and the conductive feature84 may occur near the peak concentration point. The compression near thepeak concentration point can cut of a path to the underlying layerthrough the gaps 86. When polishing above the peak concentration point,a CMP slurry may not be able to penetrate through the gaps 86 to reachthe underlying layer.

In FIG. 14, a barrier layer 100 is formed over the conductive feature 84and remaining portions of the implanted second ILD 80 i not covered bythe conductive feature 84, and a blanket conductive layer 102 is thenformed over the barrier layer 100, similar to FIG. 8.

In FIG. 15, a first planarization process, such as a CMP, is performedto remove excess amount of the conductive layer 102, the barrier layer100, and the overfill portion 84 o of the conductive feature 84. Becausethe path to the underlying layer through the gaps 86 may be closed belowthe overfill portion 84 o after the first implantation process, the CMPslurry can be prevented from penetrating gaps around the conductivefeature 84, which can leave the underlying layer undamaged in the firstplanarization process.

In FIG. 16, a second implantation process is performed to eliminate orreduce the gaps 86 between the conductive feature 84 and the surroundingdielectric material, such as the second ILD 80 and the ESL 78. Thesecond implantation process is similar to the implantation processdescribed with FIG. 7 except possibly at a lower energy level becausethe implanted species may be able to penetrate more easily into thedielectric material with the overfill portion 84 o removed.

Ion beams 118 of one or more species of neutral elements, such asdescribed above, are projected towards the dielectric material, such asthe second ILD 80 and the ESL 78. In some embodiments, the secondimplantation process is performed at an energy level in a range fromabout 7 keV to about 56 keV depending on the design, such as theoriginal thickness and final thickness of the second ILD 80. In someembodiments, the second implantation process is performed at a dosagelevel in a range from about 5×10¹³ counts/cm² to about 5×10¹⁶counts/cm², which may depend on the dimension of gaps to be closed. Insome embodiments, the second implantation process is performed at atemperature in a range from about −100° C. to about 450° C. Optionally,an anneal process is performed after the second implantation process toadjust a crystalline structure and reduce damage caused by theimplantation process in the implanted layers.

FIG. 18 is a partial enlarged view of FIG. 16 showing the details aroundthe conductive feature 84 after the second implantation process. Thespecies implanted in the implanted second ILD 80 i and the implanted ESL78 i cause the implanted second ILD 80 i and the implanted ESL 78 i toexpand. The expansion can occur in all directions. As shown in FIG. 18,the expansion induces compression at the interface 92 between (i) theconductive feature 84 and (ii) the implanted second ILD 80 i orimplanted ESL 78 i to close the gaps 86. The expansion can occur alongthe z-direction. In some embodiments, the expansion along thez-direction may be measured to indicate the overall amount of expansionthus determining the compression between the conductive feature 84 andthe dielectric layers.

Concentration profile 120 is an example implant species concentrationprofile along the depth of the implanted second ILD 80 i and theimplanted ESL 78 i according to some embodiments. Point 122 is peakconcentration point where the implant species concentration is thehighest and where the induced compression towards the conductive feature84 is likely to be the highest. Line 98 indicates a depth level where asubsequent CMP process ends. The portion of the second ILD 80 under theline 98 remains in the device while the portion of the second ILD 80above the line 98 is removed during the process. In some embodiments,the implantation process is designed so that the peak concentrationpoint is at a depth level above the line 98. The configuration canensure that the portion of the second ILD 80 interacting with the CMPslurry has high compression towards the conductive feature 84 to cut offthe path of the slurry to the underlying layers.

After the second implantation process, a second planarization process,such as a CMP, is performed to remove excess amount of the conductivelayer 102, the barrier layer 100, the implanted second ILD 80 i, and theconductive feature 84, similar to the planarization process described inFIG. 9.

Even though the present disclosure is discussed in the context offorming a conductive feature to a gate conductive fill material,embodiments may be used in any situation where a conductive feature isformed in a dielectric layer without an adhesion layer and without abarrier layer, such as in forming contacts to active regions in a FinFETdevices, forming metal plugs in intermetallization dielectric layers, orthe like.

The present disclosure provides methods for forming conductive featuresin a dielectric layer without using adhesion layers or barrier layersand devices formed thereof. By not using the adhesion layers or barrierlayers, resistance between the conductive features and the conductivematerial under the dielectric layer can be reduced. One or moreimplantations are performed to the dielectric layer after formation ofthe conductive feature to close gaps between the conductive features andthe dielectric layer that may be caused by the absence of the barrierlayer and/or adhesion layer. The implantation process can prevent layersunder the dielectric layer and the conductive features from beingexposed to process environments in the subsequent processes, such as CMPslurries, etch chemicals, and plasmas for etching, deposition orcleaning.

Some embodiments provide a structure comprising a dielectric layer overa substrate, and a conductive feature disposed through the dielectriclayer. The dielectric layer has a lower surface near the substrate and atop surface distal from the substrate. The conductive feature is indirect contact with the dielectric layer, and the dielectric layercomprises an implant species. A concentration of the implant species inthe dielectric layer has a peak concentration proximate the top surfaceof the dielectric layer, and the concentration of the implant speciesdecreases from the peak concentration in a direction towards the lowersurface of the dielectric layer.

Some embodiments provide a method for semiconductor processing. Themethod includes depositing a conductive feature in a dielectric layer.The conductive feature is in direct contact with the dielectric layer.The method further includes, after depositing the conductive feature,implanting an implant species into the dielectric layer, and afterimplanting the implant species, removing a portion of the conductivefeature by a first planarization process.

Some embodiments provide a method for semiconductor processing. Themethod includes depositing a dielectric material over a substrate havinga conductive material, forming an opening in the dielectric material toexpose the conductive material, depositing a conductive feature in theopening and directly contacting the conductive material, performing afirst implantation process to implant an implant species in thedielectric material, and after performing the first implantationprocess, performing a first planarization process to remove a portion ofthe conductive feature.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A structure comprising: a dielectric layer over asubstrate, wherein the dielectric layer has a lower surface near thesubstrate and a top surface distal from the substrate; and a conductivefeature disposed through the dielectric layer, wherein the conductivefeature is in direct contact with the dielectric layer, and thedielectric layer comprises an implant species, a concentration of theimplant species in the dielectric layer having a peak concentrationproximate the top surface of the dielectric layer, the concentration ofthe implant species decreasing from the peak concentration in adirection towards the lower surface of the dielectric layer.
 2. Thestructure of claim 1, wherein the implant species comprises at least oneof Geranium (Ge), Silicon (Si), and Nitrogen (N).
 3. The structure ofclaim 1, wherein the peak concentration of the implant species is in arange from 8×10¹⁸ atoms/cm³ to 1×10²¹ atoms/cm³.
 4. The structure ofclaim 1, further comprising an etch stop layer, wherein the dielectriclayer is disposed over the etch stop layer, and the conductive featureis disposed through the etch stop layer.
 5. The structure of claim 4,wherein the etch stop layer comprises the implant species, aconcentration of the implant species in the etch stop layer being in arange from about 2×10¹⁸ atoms/cm³ to about 6×10²⁰ atoms/cm³.
 6. Thestructure of claim 5, wherein the concentration of the implant speciesin the etch stop layer is highest at an interface with the dielectriclayer.
 7. The structure of claim 1, wherein the dielectric layercomprises a silicon oxide, silicon oxynitride, silicon oxycarbide, or acombination thereof.
 8. The structure of claim 1, wherein the peakconcentration is at the top surface of the dielectric layer.
 9. Astructure comprising: a first dielectric layer; a first conductivefeature in the first dielectric layer; a second dielectric layer overthe first dielectric layer; a third dielectric layer over the seconddielectric layer, the third dielectric layer comprising a first materialand an implant species, the implant species having a higher atomicvolume than the first material; and a second conductive featureextending through the second dielectric layer and the third dielectriclayer to the first conductive feature, the second conductive featurehaving a first sidewall contacting the third dielectric layer and asecond sidewall contacting the third dielectric layer, the firstsidewall being opposite the second sidewall, the second conductivefeature having a same material composition extending from the firstsidewall to the second sidewall.
 10. The structure of claim 9, whereinthe second dielectric layer comprises the implant species.
 11. Thestructure of claim 10, wherein a first peak concentration of the implantspecies in the third dielectric layer is greater than a second peakconcentration of the implant species in the second dielectric layer. 12.The structure of claim 10, wherein the second dielectric layer has apeak concentration of the implant species at an upper surface of thesecond dielectric layer.
 13. The structure of claim 9, wherein the thirddielectric layer has a peak concentration of the implant species at anupper surface of the third dielectric layer.
 14. The structure of claim13, wherein a concentration profile of the implant species continuouslydecreases from the upper surface of the third dielectric layer to abottom surface of the third dielectric layer.
 15. The structure of claim9, wherein the implant species comprises germanium, silicon, ornitrogen.
 16. A structure comprising: a first dielectric layer; a firstconductive feature in the first dielectric layer; one or more dielectriclayers over the first dielectric layer, the one or more dielectriclayers comprising one or more layers of dielectric materials, an upperdielectric layer of the one or more dielectric layers comprising a firstdielectric material and an implant species, the implant species having ahigher atomic volume than the first dielectric material, a peakconcentration of the implant species in the upper dielectric layer beingproximate a surface distal from the first dielectric layer; and a secondconductive feature extending through the one or more dielectric layers.17. The structure of claim 16, wherein the second conductive feature isa single conductive material directly contacting the one or moredielectric layers and the first conductive feature, an entirety of anupper surface of the second conductive feature being level with an uppersurface of the upper dielectric layer.
 18. The structure of claim 16,wherein the one or more dielectric layers comprises a second dielectriclayer interposed between the upper dielectric layer and the firstdielectric layer.
 19. The structure of claim 18, wherein the seconddielectric layer comprises a second dielectric material and the implantspecies.
 20. The structure of claim 19, wherein a peak concentration ofthe implant species in the second dielectric layer is at a surface ofthe second dielectric layer distal from the first dielectric layer.